SI8904EDB

更新時間:2024-11-05 07:53:44
品牌:VISHAY
描述:Bi-Directional N-Channel 30-V (D-S) MOSFET

SI8904EDB 概述

Bi-Directional N-Channel 30-V (D-S) MOSFET 雙向N溝道30 V( D- S)的MOSFET

SI8904EDB 數(shù)據(jù)手冊

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SPICE Device Model Si8904EDB  
Vishay Siliconix  
Bi-Directional N-Channel 30-V (D-S) MOSFET  
CHARACTERISTICS  
? N-Channel Vertical DMOS  
? Macro Model (Subcircuit Model)  
? Level 3 MOS  
? Apply for both Linear and Switching Application  
? Accurate over the ?55 to 125°C Temperature Range  
? Model the Gate Charge, Transient, and Diode Reverse Recovery  
Characteristics  
DESCRIPTION  
The attached spice model describes the typical electrical  
characteristics of the n-channel vertical DMOS. The subcircuit  
model is extracted and optimized over the ?55 to 125°C  
temperature ranges under the pulsed 0-V to 5-V gate drive. The  
saturated output impedance is best fit at the gate bias near the  
threshold voltage.  
A novel gate-to-drain feedback capacitance network is used to model  
the gate charge characteristics while avoiding convergence difficulties  
of the switched Cgd model. All model parameter values are optimized  
to provide a best fit to the measured electrical data and are not  
intended as an exact physical interpretation of the device.  
SUBCIRCUIT MODEL SCHEMATIC  
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate  
data sheet of the same number for guaranteed specification limits.  
www.vishay.com  
Document Number: 72971  
S-60075?Rev. B, 23-Jan-05  
1
SPICE Device Model Si8904EDB  
Vishay Siliconix  
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)  
Simulated  
Data  
Measured  
Data  
Parameter  
Symbol  
Test Condition  
Unit  
Static  
Gate Threshold Voltage  
On-State Drain Currenta  
VGS(th)  
ISS(on)  
1.1  
68  
V
A
V
SS = VGS, ID = 250 μA  
VSS = 5 V, VGS = 4.5 V  
VGS = 4.5 V, ISS = 1 A  
0.038  
0.049  
23  
0.037  
0.048  
12  
Drain-Source On-State Resistancea  
RSS(on)  
Gfs  
?
V
GS = 2.5 V, ISS = 1 A  
Forward Transconductancea  
VSS = 10 V, ISS= 1 A  
S
Dynamicb  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
1.4  
2.5  
1.1  
3.3  
1.6  
2
Rise Time  
VSS = 10 V, RL = 10 ?  
SS ? 1 A, VGEN = 4.5 V, RG = 6 ?  
μs  
I
Turn-Off Delay Time  
Fall Time  
1.5  
3.7  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2%.  
b. Guaranteed by design, not subject to production testing.  
www.vishay.com  
Document Number: 72971  
S-60075?Rev. B, 23-Jan-05  
2
SPICE Device Model Si8904EDB  
Vishay Siliconix  
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)  
www.vishay.com  
Document Number: 72971  
S-60075?Rev. B, 23-Jan-05  
3

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